SI4410DY,518 datasheet

Маркировка

SI4410DY,518
Производитель

NXP Semiconductors
Описание

NXP Semiconductors SI4410DY,518 Configuration: Single Continuous Drain Current: 110 A Current - Continuous Drain (id) @ 25?° C: 10A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 34nC @ 5V Gate-source Breakdown Voltage: +/- 15 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOIC (3.9mm Width) Power - Max: 2.5W Power Dissipation: 203 W Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.007 Ohms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 20 mOhms Fall Time: 86 ns Rise Time: 123 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 131 ns Part # Aliases: /T3 SI4410DY Other Names: 934056382518, SI4410DY /T3
Количество страниц

12 шт.
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PDF
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197,43 KB

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29.07.2026